what's gallium arsenide (GaAs) wafer? where's GaAs crystal for solar cells,LED manufacturer? how to buy high Ga metal or gallium arsenide(GaAs) semiconductors?

DFNano® supplier of Ga metal or gallium arsenide(GaAs) semiconductors: manufacturer of gallium arsenide (GaAs) wafer for solar cells in china.

what is Gallium arsenide (GaAs)?

Gallium arsenide (GaAs) is a semiconductor compound used in some diode s, field-effect transistor s, and integrated circuit s . The charge carriers, which are mostly electron s,move at high speed among the atom s. This makes GaAs components useful at ultra-high radio frequencies, and in fast electronic switching applications. GaAs devices generate less noise than most other types of semiconductor components. This is important in weak-signal amplification.

Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control systems. Gallium arsenide can replace silicon in the manufacture of linear ICs and digital ICs. Linear devices include oscillator s and amplifier s. Digital devices are used for electronic switching, and also in computer systems.

product Information of our gallium arsenide(GaAs) crystal

gallium arsenide(GaAs) crystal wafer
single crystal Doped conduction type concentration of flows cm-3 Density cm-2 Growth method, Max size Substrate
GaAs None Si -- <5×105 LEC, HB, Dia3" Dia3*0.5, Dia2"*0.5
Si N >5×1017
Cr Si --
Fe N ~2×1018
Zn P >5×1017
Size(mm) 25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5m, Special size and orientation are available upon request
Surface rough Surface roughness(Ra):<=5A
Polishing Single or double
Package 100 grade clean bag, 1000 grade exactly clean bag
Total 9 gallium arsenide(GaAs) crystal wafer

application of Gallium arsenide (GaAs)

Gallium Arsenide Facts Unlike silicon cells, Gallium Arsenide cells are relatively insensitive to heat. Alloys made from GaAs using aluminum, phosphorus, antimony, or indium have characteristics complementary to those of gallium arsenide, allowing great flexibility.

parameters of at 300K gallium arsenide(GaAs)

gallium arsenide(GaAs) crystal wafer
Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 4.42·1022
de Broglie electron wavelength 240A
Debye temperature 360 K
Density 5.32 g cm-3
Dielectric constant (static) 12.9
Dielectric constant (high frequency) 10.89
Effective electron mass me 0.063mo
Effective hole masses mh 0.51mo
Effective hole masses mlp 0.082mo
Electron affinity 4.07 eV
Lattice constant 5.65325 A
Optical phonon energy 0.035 eV
GaAs is very resistant to radiation damage. This, along with its high efficiency, makes GaAs very desirable for space applications.

Researchers are also exploring approaches to lowering the cost of Gallium Arsenide devices, such as fabricating GaAs cells on cheaper substrates; growing GaAs cells on a removable, reusable GaAs substrate; and even making GaAs thin films similar to those of copper indium diselenide and cadmium telluride.

parameters of gallium metal

Atomic Weight: 69.723
Melting point 29.78°C
Boiling Point 2403°C
Density: Density: 5.907 g/cm3 (20°C)
Moby hardness: 1.5 kg/mm2
Critical Temperature 1.087K
Purity Ga 5N (99.999%), 6N (99.9999%),7N (99.99999%)
application GaAs, GaP, GaAsP, GaAlAs, GaAlP,Germanium, silicon dopant
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