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manufacturer of GaN (gallium nitride) templates, substrates; GaN nanopowder,wafer crystals,crystals GaN substrates, gallium nitrid epitaxy for UV-LED in china.

high quality GaN and Sapphire substrates are required to fabricate long-lived, efficient and reliable optoelectronic and electronic devices. Nitride semiconductors are currently used in a variety of components such as near UV Laser Diodes for new generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. we offers GaN substrates to fill the needs of many applications. Detailed product descriptions and specification sheets are listed below. we product portfolio is centered on several advanced nitride semiconductor materials, including free-standing gallium nitride (GaN), GaN templates, GaN device epiwafers, and high-purity polycrystalline GaN. we also offers diamond wire for precision slicing of crystalline materials as well as substrate accessories. our products address various applications in all stages of development, from cutting edge R&D all the way to mass manufacturing.

2” free standing GaN(gallium nitride) substrates
Item GaN-FS-N GaN-FS-SI
dimensions 50.8mm ± 1mm 50.8mm ± 1mm
thickness 300 ± 25 µm 300 ± 25 µm
useable surface area LD Level > 90%
LED Level > 78%
orientation C-axis(0001) ± 0.5° C-axis(0001) ± 0.5°
orientation flat (1-100) ± 0.5°, 16.0 ± 1.0mm (1-100) ± 0.5°, 16.0 ± 1.0mm
secondary orientation flat (11-20) ± 3°, 8.0 ± 1.0mm (11-20) ± 3°, 8.0 ± 1.0mm
TTV(total thickness variation) ≤15 µm ≤15 µm
BOW ≤ 20 µm ≤ 20 µm
conduction type N-type semi insulating
resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
dislocation density Less than 5x106 cm-2 Less than 5x106 cm-2
polishing front surface: Ra < 0.2nm. Epi-ready polished, back srface: fine ground.
package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
customized sizes of GaN(gallium nitride) substrates
Item GaN-FS-10 GaN-FS-15
dimensions 10.0mm×10.5mm 14.0mm×15.0mm
thickness 300 ± 25 µm 300 ± 25 µm
marco defect density LD Level > 90%
orientation C-axis(0001) ± 0.5° C-axis(0001) ± 0.5°
TTV(total thickness variation) ≤15 µm ≤15 µm
BOW ≤ 20 µm ≤ 20 µm
conduction type N-type semi insulating
resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
dislocation density Less than 5x106 cm-2 Less than 5x106 cm-2
useable surface area > 90% > 90%
polishing front surface: Ra < 0.2nm. Epi-ready polished, back srface: fine ground.
package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
2” GaN(gallium nitride) templates
Item GaN-T-N GaN-T-S GaN-T-P
dimensions φ 2” φ 2” φ 2”
thickness 4µm, 10~40µm 30µm, 90µm 5µm
orientation C-axis(0001) ± 1° C-axis(0001) ± 1° C-axis(0001) ± 1°
conduction type N-type semi insulating P-type
resistivity(300K) < 0.05 Ω·cm >106 Ω·cm < 0.05 Ω·cm
dislocation density Less than 5x106 cm-2 Less than 5x106 cm-2 Less than 5x106 cm-2
substrate structure thick GaN on sapphire(0001) thick GaN on sapphire(0001) thick GaN on sapphire(0001)
useable surface area > 90% > 90% > 90%
polishing standard: SSP, option: DSP standard: SSP, option: DSP standard: SSP, option: DSP
package packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
non polar freestanding GaN substrates (a and m plane)
Item GaN-FS-a GaN-FS-m
dimensions 5.0mm×5.0mm 5.0mm×5.0mm
5.0mm×10.0mm 5.0mm×10.0mm
5.0mm×20.0mm 5.0mm×20.0mm
customized sizes customized sizes
thickness 300 ± 25 µm 300 ± 25 µm
orientation a-plane and m-plane ± 1° a-plane and m-plane ± 1°
TTV(total thickness variation) ≤15 µm ≤15 µm
BOW ≤ 20 µm ≤ 20 µm
conduction type N-type semi insulating
resistivity(300K) < 0.5 Ω·cm >106 Ω·cm
dislocation density Less than 5x106 cm-2 Less than 5x106 cm-2
useable surface area > 90% > 90%
polishing front surface: Ra < 0.2nm. Epi-ready polished, back srface: fine ground.
package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
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